| PART |
Description |
Maker |
| NTR1P02T3G |
Power MOSFET -20 V, -1 A, P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| SI4421DY-T1-E3 |
TRANSISTOR 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
Vishay Siliconix
|
| MMSF10N03Z MMSF10N03Z_D ON2249 |
SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
Medium Power Surface Mount Products
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| BC847BDW1T3 |
General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| LT10000-S |
Current Transducer LT 10000-S
|
LEM[LEM]
|
| CGS103U075R4L3PH CGS103U075R4L4PHS CGS103U075R4L3P |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, STUD MOUNT RADIAL LEADED, CAN
|
Aerovox, Corp.
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| HMC611 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
Hittite Microwave Corporation
|
| KED103CY |
(KEDxxxx) NTC WIDERSTAND 10000 OHM
|
BTH
|
|
