| PART |
Description |
Maker |
| MSM514102DL MSM514102D MSM514102D-80SJ |
4M X 1 STATIC COLUMN DRAM, 80 ns, PDSO20
From old datasheet system
4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
|
| KM44C258CP-6 KM44C258CJ-6 KM44C258CJ-8 KM44C258CP- |
256K X 4 STATIC COLUMN DRAM, 60 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
|
|
| MSM511002A-10ZS |
1M X 1 STATIC COLUMN DRAM, 100 ns, PZIP19
|
OKI ELECTRIC INDUSTRY CO LTD
|
| H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| T6A39 E007213 |
From old datasheet system
COLUMN DRIVER LSI FOR A DOT MATRIX LCD
COLUMN DRIVER FOR A DOT MATRIX LCD
|
TOSHIBA[Toshiba Semiconductor]
|
| STK12C68-5KF35 STK12C68-5KF35I STK12C68-5KF35M STK |
8K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
8K x 8 AutoStore垄芒 nvSRAM QuantumTrap垄芒 CMOS Nonvolatile Static RAM
8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
8K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
CAP 470PF 500V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
8K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器
8K x 8 AutoStore??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM
8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
8K X 8 NON-VOLATILE SRAM, 55 ns, PDSO28
8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
|
SIMTEK
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
CYPRESS SEMICONDUCTOR CORP
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
