| PART |
Description |
Maker |
| M54580FP |
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric
|
| M54560P |
7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| MIC2981 MIC2982 MIC2981BN_ MIC2981BWM_ MIC2981BWM/ |
High-Voltage High-Current Source Driver Array Preliminary Information
|
MICREL[Micrel Semiconductor]
|
| BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers
PNP Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| LB1231 LB1233 LB1232 LB1234 |
High-Voltage, Large Current Darligton Transistor Array
High-Voltage, High- Current Darlington Transistor Array
PERIPHERAL DRIVER,7 DRIVER,BIPOLAR,DIP,16PIN,PLASTIC
Septuple Peripheral Driver
From old datasheet system
High-Voltage / High- Current Darlington Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
Sanyo Electric Co.,Ltd.
|
| TH3L20 TH3J10 TH3C10 TH3L10 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP
TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP
High Voltage / High Speed Switching Transistors
From old datasheet system
|
Shindengen Electric Mfg
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| MAGX-000035-05000P MAGX-000035-PB2PPR |
GaN on SiC D-Mode Transistor Technology Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
