| PART |
Description |
Maker |
| EM6A9325BG-7.5G EM6A9325BG-8G EM6A9325 EM6A9325BG- |
4M x 32 Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| CMS3216LAX-75XX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS6416LAX-15EX CMS6416LAF CMS6416LAG CMS6416LAH |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
