PART |
Description |
Maker |
6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 15A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 100A I(C) TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 200A I(C) 4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver Bipolar Transistor Modules
|
Fuji Electric Co., Ltd.
|
2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252 TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五(巴西)总裁|甲一(c)|52 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
DB12508004 DB12408005 |
TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 800A I(C) TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 800A I(C) 晶体管|晶体管|达林顿|叩| 400V五(巴西)总裁| 800A一(c
|
PHOENIX CONTACT Deutschland GmbH
|
2SB1418/2SB1418A 2SB1418AQ 2SB1418P |
2SB1418. 2SB1418A - PNP Transistor Darlington TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁|甲一(c)|21VAR TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 60V的五(巴西)总裁|甲一(c)|21VAR
|
Atmel, Corp. Amphenol, Corp.
|
2SD768K |
Silicon NPN Darlington Transistor TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
2SC1881K |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
2SD2242/2SD2242A 2SD2242Q |
2SD2242. 2SD2242A - NPN Transistor Darlington TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-126VAR 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 4A条一(c)|26VAR
|
Panasonic, Corp.
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
2SD2457R 2SD2463K |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-62 TRANSISTOR | BJT | DARLINGTON | NPN | 31V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 31V五(巴西)总裁|甲一(c)|园区
|
Electronic Theatre Controls, Inc.
|
AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5 TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 10A条一(c)|
|
SCHURTER AG
|