PART |
Description |
Maker |
V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
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Mosel Vitelic, Corp. Mosel Vitelic Corp
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V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏,第二的TSOP / SOC的包米1616米x 82 × 4
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Mosel Vitelic Corp Mosel Vitelic, Corp.
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V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
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Hynix Semiconductor
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K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费(符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYB25D256160CC-6 HYB25D256400CC-5 HYB25D256400CC-6 |
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR400 (3-3-3); available 2Q04 DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04 DDR SDRAM Components - 256Mb (16Mx16) DDR400 (3-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
|
Infineon
|
K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronics Inc
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M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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