PART |
Description |
Maker |
UPA1913TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1817 UPA1817GR-9JG UPA1817GR-9JG-E2 |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp. NEC, Corp. Lattice Semiconductor, Corp.
|
UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type) SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor From old datasheet system
|
NEC[NEC]
|
2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1901 UPA1901TE UPA1901TE-T2 UPA1901TE-T1 |
Nch enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
UPA1763G-E1 UPA1763G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
UPA2750GR UPA2750GR-E2 UPA2750GR-E1 |
Nch enhancement-type MOS FET (Dual type) SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
UPA1707G-E2 UPA1707G-E1 |
Nch enhancement type power MOS FET
|
NEC
|
UPA1722G-E1 UPA1722G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|