| PART |
Description |
Maker |
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW40N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHY20N120R3 IHY15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五（DRM）的|00VAR120
|
Mitsubishi Electric, Corp.
|
| IRGMVC50U |
600V COPACK Hi-Rel IGBT in a TO-258AA package
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
|
IRF[International Rectifier]
|
| TISP5190H3BJ TISP5110H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solut...
|
