| PART |
Description |
Maker |
| UPD6P4BMC-5A4 |
MS3112E22-32S
|
NEC Corp.
|
| MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片，32秒银行，32K/32ms参考，.5V
(32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| A2W005G A2W10G A2W04G A2W06G A2W08G A2W02G A2W01G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS 雪崩玻璃钝化桥式整流
KPT05E18-32S
|
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 6450120-1 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 8P 32S 8P ( AMP )
|
Tyco Electronics
|
| 6450120-5 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 7P 32S 6P ( AMP )
|
Tyco Electronics
|
| 1450120-5 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 7P 32S 6P ( AMP )
|
Tyco Electronics
|
| 1450100-6 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL VERT HDR 7P 32S 7P ( AMP )
|
Tyco Electronics
|
| K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5A 512Kx8位低功耗和低电压的CMOS静态RAM
PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RAM
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
D38999/26WA98SN
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
