PART |
Description |
Maker |
ISL76671AROZ-T7 |
Low Power, <100 Lux Optimized, Analog Output Ambient Light Sensor
|
Intersil Corporation
|
AN805 |
PWM Optimized Power MOSFETs for Low-Voltage DC/DC Conversion
|
Vishay Siliconix
|
CN-0187 ADL5502 ADP121 |
Crest Factor, Peak, and RMS RF Power Measurement Circuit Optimized for High Speed, Low Power, and Single 3.3 V Supply
|
Analog Devices
|
ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
AN805 |
Power MOSFETs Optimized for Low-Voltage DC/DC Conversion Dual 14-Bit nanoDAC® with 5 ppm/°C On-Chip Reference; Package: MSOP; No of Pins: 10; Temperature Range: Automotive
|
Vishay Intertechnology,Inc.
|
L494906 NCV4949DWR2G NCV4949 NCV4949DG NCV4949DR2 |
100 mA, 5.0 V, Low Dropout Voltage Regulator with Power-On Reset(100 mA, 5.0 V, 具有上电复位功能的低压差稳压 一○○毫安.0 V固定,低压差线性稳压器的上电复位(100毫安.0五,具有上电复位功能的低压差稳压器) 100 mA, 5.0 V, Low Dropout Voltage Regulator with Power−On Reset
|
ONSEMI[ON Semiconductor]
|
AT40K-FFT AT40K05LV AT40K20 AT40K20LV AT40K40 AT40 |
AT40K-FFT [Updated 8/98. 8 Pages] Fast fourier transform Intellectual Property Core for AT40K FPGAs From old datasheet system 5K - 50K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam. 20K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V) 20K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V) 40K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V) 10K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V) 10K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V) 5K - 50K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (3.3V) 5K Gate FPGA with DSP Optimized Core Cell and Distributed FreeRam (5V)
|
Atmel Corp
|
VTS3180 VTS3182 VTS3185 VTS3080 VTS3082 VTS3085 |
Process photodiode. Isc = 3 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. Process photodiode. Isc = 0.16 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
ISL9N307AS3ST ISL9N307AP3 |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power Slow SRAM - 256K x8|3.3V|70/85/100|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
|
IP2002PBF |
Synchronous Buck Multiphase Optimized BGA Power Block Intergrated Power Semiconductors,Drivers&Passives
|
International Rectifier
|