| PART |
Description |
Maker |
| TC1202 |
Super Low Noise GaAs FETs 超级低噪声砷化镓场效应管
|
Electronic Theatre Controls, Inc.
|
| TC1301 |
Low Noise and Medium Power GaAs FETs
|
List of Unclassifed Manufacturers
ETC
TRANSCOM
|
| TC2101 |
Plastic Packaged Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| TC3918 |
Packaged Single-Bias Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| TC2141 |
Low Noise and High Dynamic Range Packaged GaAs FETs
|
Transcom, Inc.
|
| TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range
|
Microchip
|
| TC2676 |
2 W Low-Cost Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| MGF130297 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
