| PART |
Description |
Maker |
| FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLC317MG-4 |
HIGH VOLTAGE - HIGH POWER GAAS FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| TC1601 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FJP3305H1 FJP3305H1TU FJP3305H2 FJP3305H2TU |
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
|
Fairchild Semiconductor
|
| Q62702-F1066 BFN25 BFN27 Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
