| PART |
Description |
Maker |
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM，贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55L |
SUBMINIATURE POWER RELAY
128K X 8 CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns
64K x 9 low voltage Deep Sync FIFO, 25ns
64K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 25ns
32K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 15ns
32K x 9 low voltage Deep Sync FIFO, 25ns
From old datasheet system
16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| WPS512K8C-20RJMB WPS512K8LB-15RJMB WPS512K8LB-25RJ |
512K x 8 SRAM, 20ns
512K x 8 SRAM, low power, 15ns
512K x 8 SRAM, low power, 25ns
512K x 8 SRAM, 15ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
