| PART |
Description |
Maker |
| STW43NM60ND |
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode
|
STMicroelectronics
|
| SI9933ADYD84Z SI9933ADYL86Z SI9933ADYF011 |
3.4 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FQU20N06LTU |
60V N-Channel Logic level QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| AUIRFU024N AUIRFR024NTRR AUIRFR024NTRL |
17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Advanced Planar Technology
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| FCD600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
|
Fairchild Semiconductor
|
| CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT
Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FCPF600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
|
