| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| BUZ902DP BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| BUZ902D BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
| KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
| ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C3 |
QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No
|
Exar, Corp.
EXAR[Exar Corporation]
|
| KI1400DL |
Drain-source voltage VDS 20 V Gate-source voltage VGS -12 V
|
TY Semiconductor Co., L...
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| 2SK2110 |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BUZ903 |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
