PART |
Description |
Maker |
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
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Fujitsu Limited Fujitsu, Ltd.
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CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns 256K-bit CMOS parallel EEPROM 200ns 256K-bit CMOS parallel EEPROM 300ns 256K-Bit CMOS PARALLEL E2PROM 128Kx8 EEPROM 128Kx8 EEPROM 32K X 8 EEPROM 3V, 200 ns, PQCC32
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http:// CATALYST[Catalyst Semiconductor] Intersil, Corp. Epson (China) Co., Ltd. STMicroelectronics N.V. ON SEMICONDUCTOR
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29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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W29C020T-90 W29C020T-12 W29C020T-90A W29C020T-70B |
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 BOX 3.4X2.56X1.02 W/6 BTNS ALMOND 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 BOX 3.4X2.56X1.02 W/6 BTNS BLK 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 BOX 3.4X2.56X1.02 W/3 BTNS ALMOND BOX 2.53X1.73X.65 W/2 BTNS BLK 256K X 8 CMOS FLASH MEMORY
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Winbond Electronics, Corp. Winbond Electronics Corp
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24LC256ESM 24LC256IP 24LC256ISM 24LC256EP 24AA256 |
256K I2C CMOS EEPROM 256K I 2 C CMOS Serial EEPROM 256K的I 2 C⑩的CMOS串行EEPROM 256KI2CCMOSSerialEEPROM
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Microchip Technology, Inc. Microchip Technology Inc. MicrochipTechnology
|
LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components] Sharp Corporation
|
P4C1041-10JC P4C1041-10JI P4C1041-10TC P4C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
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Pyramid Semiconductor C... Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation
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LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM CAC 3C 3#12 PIN PLUG
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
LH52256C-10LL LH525CL9 |
256K SRAM CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM) 的CMOS 256K2K的8)静态RAM(的CMOS 256K2K的8)静态的RAM
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Sharp Electrionic Compo... Sharp Electrionic Components Sharp, Corp.
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HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8) IC-SM-256K CMOS EEPRM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
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27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM 256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8)低电压的CMOS存储 256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
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MICROCHIP[Microchip Technology] Microchip Technology Inc. Microchip Technology, Inc.
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HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
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SIEMENS AG
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