| PART |
Description |
Maker |
| APT5016BLL APT5016SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 30A 0.160 Ohm
|
Advanced Power Technology
|
| ISL9K30120 ISL9K30120G3 |
30A, 1200V Stealth?/a> Dual Diode
30A, 1200V Stealth⑩ Dual Diode
30A, 1200V Stealth Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RHRG30120CC FN3411 |
30A/ 1200V Hyperfast Dual Diode
30A, 1200V Hyperfast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRG30120 |
30A/ 1200V Hyperfast Diode
30A, 1200V Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJH1CV6DPQ-E0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT30D120B ADVANCEDPOWERTECHNOLOGYLTD.-APT30D120B |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1200V 30A
|
Advanced Power Technology
|
| STGW30NC120HD GW30NC120HD |
N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
