| PART |
Description |
Maker |
| HYS72V8200GU HYS64V8200GU HYS72V16220GU HYS64V1622 |
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module 3.38米64/72-Bit一银行内存模块3.36米x 64/72-Bit 2银行内存模块
3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:10ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
From old datasheet system
|
SIEMENS A G
DRAM
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC]
N.A.
|
| HB56UW1673E-5F HB56UW1673E-6F HB56UW1673E-F |
128MB Buffered EDO DRAM DIMM 16-Mword × 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M × 4 components)
128MB Buffered EDO DRAM DIMM 16-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 隆驴 4 components)
|
Elpida Memory
|
| K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位（200万x8/1M x16）的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| HM5425161B HM5425161BTT-10 HM5425161BTT-75A HM5425 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
|
ELPIDA[Elpida Memory]
|
