PART |
Description |
Maker |
HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存 x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
AT89LS8252 AT89S8252 |
Low Voltage, Downloadable MCU with 8K bytes Flash and 2K bytes EEPROM. In-System Programmable Microcontroller with 8K bytes Flash & 2K bytes EEPROM
|
Atmel
|
PIC16F62XT-20E_SS PIC16LF62X-20_P PIC16F62X-20_SO |
FLASH-Based 8-Bit CMOS Microcontroller Code Hopping Encoder(KeeLoq 码编码器) RESISTOR,ARRAY,2.2K, 5% RES ARRAY 100 OHM 4TERM 2RES SMD BBG ECL GATE OR/NOR TRPL; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000 Triple 2-3-2-Input OR/NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000 Enhanced FLASH/EEPROM 8-Bit Microcontroller(驱动/吸收电流高,工作电压2.0~5.5V,微控制 Enhanced FLASH 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory(带ADC转换器和EEPROM数据存储器的闪速CMOS微控制器) Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高,工作电压3.0~5.5V,微控制 Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高,工作电压2.5~5.5V,微控制 8-Pin, 8-Bit CMOS Enhanced FLASH Microcontroller with A/D Converter and EEPROM Data Memory(-2.5~5.5V,具ADC,闪速微控制 OTP 8-Bit CMOS Microcontroller with EEPROM Data Memory(工作电压2.5~5.5V路比较器,微控制 2K 5.0V IIC serial EEPROMs(2.5V~5.5V,2K1M次擦写周ISO7816标准) 1K 5.0V IIC serial EEPROMs(2.5V~5.5V,1K1M次擦写周ISO7816标准) 256K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,256K浣?SPI?荤嚎涓茶?EEPROM)
|
Microchip Technology Inc.
|
W55F01 W55F10A W55FXX |
EEPROM EEPROM From old datasheet system Voice & Speech IC Interactive Toy Serial Flash Memory
|
Mitsubishi Electric, Corp. Winbond
|
WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 EEPROM EEPROM EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC 60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
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White Electronic Designs Mosel Vitelic, Corp. International Rectifier, Corp. TE Connectivity, Ltd. KODENSHI, CORP. Microchip Technology, Inc. Century Container
|
IRFI734G IRFI734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=450V Rds(on)=1.2ohm Id=3.4A) Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)
|
IRF[International Rectifier]
|
AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启 x8/x16 Flash EEPROM x8/x16闪存EEPROM 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company Atmel, Corp. AMIC Technology, Corp. Advanced Micro Devices, Inc. ATMEL[ATMEL Corporation]
|
LH28F160S5HB-L70 LH28F160S5HB-L10 LH28F160S5HD-L10 |
1M X 16 FLASH 5V PROM, 80 ns, PDSO56 0.600 INCH, PLASTIC, SSOP-56 x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp Electronics, Corp. Sharp, Corp.
|
AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns 5V 512K x 8 CMOS flash EEPROM, access time 55ns 5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP BGA, ROHS-A, IND TEMP, T&R(ARM) BGA,GREEN,IND TEMP,T&R(ARM) x32 Flash EEPROM Module X32号,闪存EEPROM模块 EEPROM EEPROM
|
Infineon Technologies AG Amphenol Tuchel
|