| PART |
Description |
Maker |
| WED2ZL361MSJ-BC WED2ZL361MSJ26BI WED2ZL361MSJ42BC |
NBL SSRAM MCP
1M X 36 MULTI DEVICE SRAM MODULE, 2.6 ns, PBGA119
1M X 36 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA119
|
WHITE ELECTRONIC DESIGNS CORP
|
| M6MGD137W34DKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT647M34CKT M6MGB647M34CKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| S75PL127NBFJFWGZ2 S75PL127NCFJFWGZ3 S75PL256NCFJFW |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion, Inc.
|
| S71WS512NB0BAEZZ0 S71WS512NB0BAEZZ2 S71WS512N80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt 堆叠式多芯片产品（MCP）的闪存和移动存储芯片的CMOS 1.8伏特
|
Spansion Inc.
Spansion, Inc.
|
| AM49DL320BGB701T AM49DL320BGT701T AM49DL320BGT701S |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位个M × 8 2米x 16位）.0伏的CMOS只，同时
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位4个M × 8 2米x 16位）.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
Spansion Inc.
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
|
Vicor, Corp.
|
| EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
| S71WS512ND0BAWE63 S71WS256NC0BAWA32 |
Stacked Multi-Chip Product (MCP)
|
SPANSION LLC
|
| S71GL128NB0 |
(S71GLxxxNB0) Stacked Multi-chip Product (MCP)
|
SPANSION
|
| S71PL129JB S71PL129JB0BAW9Z0 S71PL129JA0BAI9P0 S71 |
Stacked Multi-Chip Product (MCP) Flash Memory
|
SPANSION[SPANSION]
|
