PART |
Description |
Maker |
AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基 1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
KI4980DY |
Drain-Source Voltage Vds 80V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI5903DC |
Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
KRF8910 |
Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
KI1302DL |
Drain-source voltage VDS 30 V Gate-source voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
2SK667 |
Drain Source Voltage-: VDSS= 400V(Min)
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Inchange Semiconductor ...
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