| PART |
Description |
Maker |
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| PH28F128L18 28F128L18 28F256L18 |
(28FxxxL18) StrataFlash Wireless Memory
(PH28FxxxL18) StrataFlash Wireless Memory
|
Intel Corporation
|
| JS28F128J3A |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| GE28F640J3 |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| 28F128L18 28F256L18 |
StrataFlash Wireless Memory
|
Numonyx B.V
|
| DA28F640J5-150 DA28F320J5-120 G28F640J5-150 G28F32 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
|
INTEL[Intel Corporation]
|
| 28F320S3 29060805 |
5 Volt Intel StrataFlash Memory
From old datasheet system
|
Intel
|
| 28F320J5 28F640J5 29060613 |
5 Volt Intel StrataFlash Memory
From old datasheet system
|
Intel
|
| DA28F640J5-150 DA28F320J5-120 G28F640J5-150 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 4M X 16 FLASH 5V PROM, 150 ns, PBGA56
|
Intel Corp.
Intel, Corp.
|
| 28F640P3 PF48F3P0ZB00 PF48F2P0ZB00 PC48F0P0VB00 PC |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:5m; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
Intel StrataFlash Embedded Memory 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Intel StrataFlash Embedded Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
COAXIAL CABLE; COAXIAL RG/U TYPE:11; IMPEDANCE 75OHM CONDUCTOR SIZE AWG:14; NO. STRANDS X STRAND SIZE: SOLID; JACKET MATERIAL:POLYVINYLCHLORIDE (PVC); CONDUCTOR MATERIAL:STEEL; CONDUCTOR PLATING COPPER; JACKET COLOR:BLAC 英特尔StrataFlash嵌入式存储器
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
Intel StrataFlash Embedded Memory 英特尔StrataFlash嵌入式存储器
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 英特尔StrataFlash嵌入式存储器
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle 英特尔StrataFlash嵌入式存储器
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A 英特尔StrataFlash嵌入式存储器
Strata Flash Memory / 1 Gbit P30 Family
CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41
Intel StrataFlash Embedded Memory
|
Intel Corp.
http://
Intel, Corp.
Intel Corporation
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
