| PART |
Description |
Maker |
| HYS72D256220GBR-7-B HYS72D128300HBR-5-B HYS72D1283 |
256MB - 2GB, 184pin
|
Infineon
|
| HYS72D128320GBR-7-C HYS72D32300GBR-7-C HYS72D64300 |
256MB - 2GB, 184pin
|
Infineon
|
| HYS64T128020HDL-3.7-A HYS64T128020HDL-5-A |
256MB - 2GB, 200pin
|
Infineon
|
| M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M36 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册，瓦特/锁相环，葡萄多糖
|
Optrex America, Inc.
3M Company
|
| TS2GJFV15 |
2GB USB2.0 JetFlash垄芒V15
2GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm
256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
| TS2GJFV90P |
2GB USB2.0 JetFlash㈢ V90P
2GB USB2.0 JetFlash V90P
|
ETC
Transcend Information. Inc.
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| HYMD264G726DP4M-H HYMD212G726DSP4M-H HYMD264G726DP |
184pin Registered DDR SDRAM DIMMs
|
Hynix Semiconductor
|
