| PART |
Description |
Maker |
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| STF9NM60N STP9NM60N |
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
|
ST Microelectronics
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| 1N60AG-A-T92-B |
0.5 A, 600 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| PHX4N60 |
3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| NDF04N60ZG NDF04N60ZH NDD04N60Z-1G NDD04N60ZT4G |
N-Channel Power MOSFET 600 V, 2.0 Ohm
|
ON Semiconductor
|
| FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 |
From old datasheet system
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STD6NM60N-1 |
4.6 A, 600 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
STMICROELECTRONICS
|
|
