| PART |
Description |
Maker |
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D |
16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| DS1270W |
3.3V 16Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
|
| BC369-10 |
16Mb EDO/FPM - OBSOLETE 晶体
|
SIEMENS AG
|
| VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| DS3070W-100 DS3070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
|
MAXIM[Maxim Integrated Products]
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| M29W128FH M29W128FH60N6E M29W128FH60N6F M29W128FH6 |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| HFDOM44S3V HFDOM44S3VXXX DOM44S3V016 DOM44S3V032 D |
44Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HFDOM40S3RXXX DOM40S3R016 DOM40S3R032 DOM40S3R048 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface
|
HANBiT Electronics Co., Ltd.
HANBIT[Hanbit Electronics Co.,Ltd]
|
| M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L0R8000B0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
