| PART |
Description |
Maker |
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers)
From old datasheet system
MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK32 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
