PART |
Description |
Maker |
HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词?8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
TM54S816T |
Organized as 4-blank x 2097152-word x 16-bit(8Mx16)
|
Avic Technology
|
M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
M5M4V64S30ATP-12 M5M4V64S30ATP-8 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM 262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc. SONY
|
MSM532001B |
262144 word x 8-Bit Mask ROM
|
OKI Semiconductor
|
TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
M66288FP |
262144-word x 8-bit x 3-FIFO MEMORY
|
Renesas Electronics Corporation
|
M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http:// Renesas Electronics Corporation
|
M5M5T5672TG M5M5T5672TG-20 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|