| PART |
Description |
Maker |
| NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| HY514264BLJC-60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| HY514170BSLRC-70 HY514170BTC-70 HY514170BSLTC-70 H |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Dialight PLC
|
| GM71C4260DT-70 GM71CS4260DT-70 GM71CS4260DJ-70 GM7 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Honeywell International, Inc.
|
| HM514260ALJ-6R HM51S4260ALJ-6R HM514260ALZ-6R HM51 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
3M Company
|
| UPD424170LLE-A60 UPD424170LG5M-A60 UPD424170AG5-70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
TE Connectivity, Ltd.
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
