PART |
Description |
Maker |
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
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Infineon Technologies AG Infineon Technologies A...
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KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
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KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
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IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
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V43648S04VTG-10PC |
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器PC100 SDRAM模块) 3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64浣???ц?????插?PC100 SDRAM妯″?)
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Mosel Vitelic, Corp.
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K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
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K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KMM372F3200CS1 KMM372F3280CS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
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HB52R1289E22 HB52R1289E22-A6B HB52R1289E22-B6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M ??4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM 1 GB的注册SDRAM的内 GB的注册SDRAM的内存(364 M组件)PC100的SDRAM内存 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM
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ELPIDA MEMORY INC Elpida Memory, Inc.
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TS512MJFV30 |
512MB USB2.0 JetFlash垄芒V30 512MB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
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Samsung Semiconductor Co., Ltd. Leshan Radio Company, Ltd. Hynix Semiconductor
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