PART |
Description |
Maker |
K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM RIEMEN SYNCHRON HTD L 305MM B 15MM RIEMEN SYNCHRON HTD L 575MM B 15MM Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits RIEMEN SYNCHRON HTD L 480MM B 30MM RIEMEN SYNCHRON HTD L 560MM B 200MM RIEMEN SYNCHRON HTD L 600MM B 200MM Dual/Triple-Voltage µP Supervisory Circuits RIEMEN SYNCHRON HTD L 640MM B 200MM Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout RIEMEN SYNCHRON HTD L 720MM B 30MM 3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE RIEMEN SYNCHRON HTD L 880MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 200MM RIEMEN SYNCHRON HTD L 450MM B 15MM 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 2-Wire-Interfaced 8-Bit I/O Port Expander with Reset Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE RIEMEN SYNCHRON HTD L 1100MM B 15MM RIEMEN SYNCHRON HTD L 980MM B 15MM RIEMEN SYNCHRON HTD L 1800MM B 15MM RIEMEN SYNCHRON HTD L 1120MM B 30MM RIEMEN SYNCHRON HTD L 1120MM B 200MM RIEMEN SYNCHRON HTD L 1200MM B 200MM RIEMEN SYNCHRON HTD L 1260MM B 200MM RIEMEN SYNCHRON HTD L 1600MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 30MM RIEMEN SYNCHRON HTD L 1420MM B 15MM RIEMEN SYNCHRON HTD L 1600MM B 30MM RIEMEN SYNCHRON HTD L 1270MM B 15MM RIEMEN SYNCHRON HTD L 1200MM B 30MM RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米 RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米 RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米 RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd. Amphenol, Corp. Rubycon, Corp.
|
K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P40 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC |
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM 128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1353B-40AC CY7C1353B-50BGC CY7C1353B-50AC CY7C |
256Kx18 Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
|
KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
CY7C1352G-250AXI CY7C1352G CY7C1352G-133AXC CY7C13 |
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|