PART |
Description |
Maker |
AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125 CMOS Dual Binary Up-Counter 16-SO -55 to 125 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
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AT29C010 AT29C010A AT29C010A-12 AT29C010A-12JC AT2 |
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory
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ATMEL[ATMEL Corporation]
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AT29BV010A-25 AT29BV010A-30JC AT29BV010A-30JI AT29 |
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
|
Atmel Corp.
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EN29LV010 EN29LV010-45RJC EN29LV010-45RJCP EN29LV0 |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
N.A. ETC Eon Silicon Solution Inc.
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EN39LV010-45RNIP EN39LV010 EN39LV010-45RJI EN39LV0 |
1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
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Eon Silicon Solution Inc. Eon Silicon Solution In...
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
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GS8320Z36GT-166 GS8320Z18GT-166 GS8320Z36GT-225 GS |
1 MEGABIT SERIAL CONFIGURATION PROM 流水线和流量分配36MB通过同步唑的SRAM 1 MEGABIT 3.3 VOLT SERIAL CONFIGURATION 流水线和流量分配36MB通过同步唑的SRAM 36Mb Pipelined and Flow Through Synchronous NBT SRAM 流水线和流量分配36MB通过同步唑的SRAM Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 256K 3.3 VOLT SERIAL CONFIGURATION PROM 128K SERIAL CONFIGURATION PROM
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Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers List of Unclassifed Man...
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S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
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AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot 2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
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AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32 CABLE TIE BARB TY 120LB 18.1,1
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PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices] ADVANCED MICRO DEVICES INC
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