| PART |
Description |
Maker |
| EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| EMC5DXV5T1 |
(EMC2DXV5T1 / EMC5DXV5T1) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| NSTB1005DXV5T1 |
(NSTB1005DXV5T1 / NSTB1005DXV5T5) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2N2356 |
COLLECTOR TO BASE VOLTAGE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
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