PART |
Description |
Maker |
EGP30A- EGP30J EGP30A |
Fast Rectifiers (Glass Passivated) 3.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流3.0安培高效率玻璃钝化整流器)
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
S3K-13 S3MB |
Glass Passivated Die Construction 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 U |
Ultra Fast Recovery Pack: DO-201AD ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 3.0A
|
Gulf Semiconductor
|
1G1-15 |
Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere Glass Passivated Junction Rectifiers
|
GOOD-ARK Electronics
|
1R5GU4G |
Ultra Fast Recovery Pack: DO-15 ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE锛?50V CURRENT锛?.5A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?50V CURRENT?.5A
|
Gulf Semiconductor
|
GPP20A GPP20B GPP20D GPP20G GPP20J GPP20K GPP20M |
Glass Passivated Junction Rectifiers 玻璃钝化结整流器 Glass Passivated Junction Rectifiers, Forward Current 2.0A
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
GBLA02 GBLA10 GBLA005 GBLA01 GBLA04 GBLA06 GBLA08 |
Glass Passivated Single-Phase Bridge Rectifiers Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 A
|
VISAY[Vishay Siliconix]
|
FB380-C1500RG FB80-C1500RG FB40-C1500RG FB250-C150 |
900 V, 1.5 A, fast recovery glass passivated bridge rectifier FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS 快恢复玻璃钝化桥式整流器
|
Electronics Industry Public Company Limited EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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Z1SMA200 Z1SMA110 Z1SMA130 |
200 V, 5 mA, 1 W surface mounted glass passivated zener diode 110 V, 5 mA, 1 W surface mounted glass passivated zener diode 130 V, 5 mA, 1 W surface mounted glass passivated zener diode
|
Fagor
|
GBPC2501 GBPC25005 GBPC2510 GBPC2508 GBPC2502 GBPC |
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes) SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER Isolated Flyback Switching Regulator with 9V Output 隔离反激式开关稳V输出 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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Shanghai Sunrise Electronics Pan Jit International Inc. CHENYI[Shanghai Lunsure Electronic Tech] Shanghai LUNSURE Electronic Technology Co., Ltd. General Semiconductor
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