| PART |
Description |
Maker |
| BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| BSO094N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.1mOhm, 13A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSO119N03S INFINEONTECHNOLOGIESAG-BSO119N03S |
GIGATRUE CAT6 UNIVERSAL JACK, GRAY
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 11.9mOhm, 11A, LL
|
INFINEON[Infineon Technologies AG]
|
| IPI80CN10NG IPP80CN10NG10 IPB80CN10NG IPD80CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP12CN10LG IPS12CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
| IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL302SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
