| PART |
Description |
Maker |
| MADR-009151-000DIE MADR-0009151-000DIE MADRCC0006T |
Single Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
| SWD-109 SWD-109PIN SWD-109TR |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| DR65-01091 |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| MADR-009269-0001TR |
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SWD-119 SWD-119PIN SWD-119TR |
Quad Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| DR65-0001 DR65-0001TR |
Quad Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard
Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
