PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
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NXP Semiconductors N.V.
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BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
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NXP Semiconductors N.V.
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BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF6G22LS-180RN |
Power LDMOS Transistor
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Philips Semiconductors
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BLF8G27LS-100P-15 |
Power LDMOS transistor
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NXP Semiconductors
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L88016-14 |
RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
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BLF7G22L-130N |
Power LDMOS transistor
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NXP Semiconductors
|
BLF7G20L-200 |
Power LDMOS transistor
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Philips Semiconductors
|
BLP15M7160P |
Power LDMOS transistor
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NXP Semiconductors
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