| PART |
Description |
Maker |
| 2N2907A |
Type 2N2907A Geometry 0600 Polarity PNP
|
SEMICOA[Semicoa Semiconductor]
|
| GBU610 GBU608 |
6.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components Intern...
|
| BCM857BS BCM857BV BCM857BV115 BCM857DS135 BCM857DS |
PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP/PNP matched double transistors
|
NXP Semiconductors N.V.
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode
SMD Switching Diode Dual: In Series
SMD Switching Diode Single: High Voltage
SMD Switching Diode Dual: Common Cathode
SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
ON Semiconductor
|
| BD138 BD138-10 BD138-16 BD140 BD140-10 BD140-16 BD |
PNP power transistors
PNP power transistors 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Green; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
PNP power transistor(PNP????朵?绠?
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| MMST39062 MMST3906-7-F |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
TRANS PNP BIPOLAR 40V SOT323 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
