PART |
Description |
Maker |
LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器) Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation Sharp Electrionic Components
|
29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
MBM29DL164TD-70PFTN MBM29DL162TD-90PBT MBM29DL164T |
1M X 16 FLASH 3V PROM, 90 ns, PDSO48 FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU LTD http://
|
MBM29LV016T-80 MBM29LV016T-80PTN MBM29LV016T-80PTR |
FLASH MEMORY 16M (2M x 8) BIT
|
Fujitsu Microelectronics
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MBM29PL12LM10PCN MBM29PL12LM MBM29PL12LM10PBT |
FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0 |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W25X16BV |
16M-BIT SERIAL FLASH MEMORY
|
Winbond
|
MX29F016T4I-90 MX29F016TI-90 MX29F016MI-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 2M X 8 FLASH 5V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
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