| PART |
Description |
Maker |
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LY62L205016ALL-55SL LY62L205016ALL-55SLIT |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A82DL3234TG-70 A82DL32X4T A82DL3224 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
|
AMICC[AMIC Technology]
|
| K3N6VU4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
