PART |
Description |
Maker |
BLF6G10-200RN BLF6G10LS-200RN BLF6G10-200RN-15 |
Power LDMOS transistor BLF6G10-200RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G10LS-135R |
Power LDMOS transistor
|
NXP Semiconductors
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF8G27LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
L8821P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLP05H6200XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
LP701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G10-160RN BLF6G10LS-160RN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|