PART |
Description |
Maker |
HM62V16514LTTI/LTTI-XXSL |
Low Power SRAMs
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Hitachi Semiconductor
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HM62V8512CLTS/CLTS-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V16100LBPI-XX HM62V16100LTI-XX |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V16102LBPI-XX HM62V16102LBPI-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62W8512BLTT-XXUL HM62W8512BLTT/BLTT-XXSL HM62W85 |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V8512BLTT-XXUL HM62V8512BLTT/BLTT-XXSL HM62V85 |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM9264B HM9264BLFP-10L HM9264BLFP-8L HM9264BLP-10L |
64 k SRAM (8-kword x 8-bit) Low Power SRAMs
|
http:// Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
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N25S830HAT22I N25S830HAT22IT N25S830HA N25S830HAS2 |
256Kb Low Power Serial SRAMs 32K 隆驴 8 bit Organization 256Kb Low Power Serial SRAMs 32K ? 8 bit Organization 256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
ON Semiconductor
|
IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
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IDT[Integrated Device Technology]
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GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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GS8324Z72C-200 GS8324Z18B GS8324Z18C-200I GS8324Z7 |
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 10 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 7.5 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 2M X 18 ZBT SRAM, 6 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PBGA209 512K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 10 ns, PBGA209
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GSI Technology, Inc.
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