| PART |
Description |
Maker |
| CM800E2C-66H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| CM400HG-66H |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| ADP3342JRM-REEL7 ADP3342 ADP3342ARM-REEL7 |
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-SM8 -25 to 85
Ultralow, IQ, anyCAP Low Dropout Regulator
|
Analog Devices, Inc.
AD[Analog Devices]
|
| DNT90P |
RF Modules 900MHz 150mW Pinned Version
|
Murata Manufacturing Co., Ltd.
|
| CM200HG-130H |
Single IGBTMOD HVIGBT Module 200 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| QID4515001 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
