PART |
Description |
Maker |
SF2000A-AS SF2050A-AS SF2030A-AS |
Common mode:Wide band/High attenuation Dood
|
Soshin
|
LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications 17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN 17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode SMD Schottky Diode Dual: High Current: Common Cathode SMD Schottky Diode Dual: High Current: In Series SMD Schottky Diode Single: High Current ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor 2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp. GHZTECH[GHz Technology] ETC[ETC] Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
MC74HC175A MC74HC175AD MC74HC175ADR2 MC74HC175ADT |
Quad D-type Flip-Flop with Common Clock and Reset Quad D Flip-Flop with Common Clock and Reset High-Performance Silicon-Gate CMOS QUAD D FLLP-FLOP WLTH COMMON CLOCK AND RESET From old datasheet system
|
ONSEMI[ON Semiconductor]
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
CMPSH05-4C |
SMD Schottky Diode Dual: Common Cathode SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
COM5201T COM5234T COM5216T COM5203T COM5217T COM52 |
300V high efficiency, center-tap rectifier 400V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package 100V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package 16 Amp, 50 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 50 V,楂??涓???藉ご寮??娴??) 16 Amp, 150 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 150 V,高效中心抽头式整流器) 16安培50伏特,高效率,中心抽头整流器6安培50伏,高效中心抽头式整流器 200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package 600V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package 16 Amp, 300 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 300 V,楂??涓???藉ご寮??娴??) 150V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
|
Omnirel International Rectifier, Corp.
|
MC74HC174AD ON1373 MC74HC174AN |
Hex D Flip-Flop With Common Clock And Reset High-Performance Silicon-Gate CMOS Hex D Flip-Flop witth Common Clock and Reset From old datasheet system
|
Motorola, Inc
|
MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
|