| PART |
Description |
Maker |
| S560-6600-DM |
ADSL Magnetics Analog Devices
|
Bel Fuse Inc.
|
| AD9748 DAC8B10- DAC08 DAC_8B_10-100NS AD9708 AD970 |
Analog Devices: Data Converters: DAC 8-Bit, 10 ns to 100 ns Converters Selection Table
Analog Devices: Data Converters: DAC 8-Bit 10 ns to 100 ns Converters Selection Table
8-Bit High Speed Multiplying D/A Converter (Universal Digital Logic Interface)
|
Analog Devices, Inc.
AD[Analog Devices]
|
| TRAC-S2 TRAC-S2Q16 TRAC-F2Q16 |
TRAC SUPPORT CIRCUIT SPECIALTY ANALOG CIRCUIT, PDSO16
IC-SM SILICON FOR TRAC
Programmable Analog Devices
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| AEP100-S AEP100-T AEP110-S AEP140-S AEP140-T AEP12 |
ADSL Transformers for Analog Devices Chipsets
|
Nuvotem Talema
|
| EE-158-15 |
Technical Notes on using Analog Devices DSP components and development tools
|
Analog Devices
|
| ADV7521NKBCBZRL-80 |
ANALOG DEVICES SIMPLIFIES PORTABLE HD CAMERA DESIGN WITH WORLD SMALLEST HDMI TRANSMITTER
|
Analog Devices
|
| DSM2180F315K6 DSM2180F3V15T6 |
DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) 帝斯曼（数字信号处理器系统内存）模拟器件公司的ADSP - 218X系列5V电源
DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) 帝斯曼（数字信号处理器系统内存）模拟器件公司的ADSP - 218X系列V电源
|
意法半导
STMicroelectronics N.V.
|
| DSM2180F3V90T6 DSM2180F315K6 DSM2180F315T6 DSM2180 |
DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (3.3V Supply)
|
STMICROELECTRONICS[STMicroelectronics]
|
| DSM2190F4 DSM2190F4V DSM2190F4V-15K6 DSM2190F4V-15 |
DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-2191 DSPs (3.3V Supply)
|
STMICROELECTRONICS[STMicroelectronics]
|
| AD8656 AD8500 AD8638 AD8574 AD8666 ADA4691-2 AD864 |
Operational Amplifiers Selection Guide
Analog Devices Provides Amplifiers for Every Application
|
Analog Devices
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
