| PART |
Description |
Maker |
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| TS4GJF220 |
4GB USB2.0 JetFlash垄芒220
4GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
| DOM40K3R1.5G DOM40K3R032 DOM40K3R512 DOM40K3R096 |
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| M393B1G70QH0 M393B5173QH0 |
240pin Registered DIMM
|
Samsung
|
| M393B5270DH0 |
240pin Registered DIMM
|
Samsung
|
| HMT125R7TFR4C-G7 HMT125R7TFR4C-H9 HMT125R7TFR8C-G7 |
240pin DDR3 SDRAM Registered DIMM
|
Hynix Semiconductor
|
| M393B1K70DH0 |
240pin Registered DIMM based on 2Gb D-die
|
Samsung semiconductor
|
