| PART |
Description |
Maker |
| SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712 |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SKW15N120 Q67040-S4281 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode
FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软，恢复快反平行Emcon二极
|
INFINEON[Infineon Technologies AG]
|
| SKB02N12007 SKB02N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW07N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKB10N60A SKP10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
