| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor
Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,;
SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors N.V.
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| LET9120 |
120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
|
ST Microelectronics
STMicroelectronics
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| LP80214 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LP80114 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G20LS-260A |
Power LDMOS transistor
|
NXP Semiconductors
|
