PART |
Description |
Maker |
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
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Microsemi Corporation
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NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG- |
MOS FIELD EFFECT TRANSISTOR 80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
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Renesas Electronics Corporation
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NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY |
MOS FIELD EFFECT TRANSISTOR 110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
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Renesas Electronics Corporation
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APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT5026HVR |
POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200V 8A 1.600 Ohm
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http:// ADPOW[Advanced Power Technology]
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APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT20M13PVR |
POWER MOS V 200V 146A 0.013 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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