| PART |
Description |
Maker |
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
AMI[AMI SEMICONDUCTOR]
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| HY62UF08401C HY62UF08401C-DSI HY62UF08401C-I HY62U |
Super Low Power Slow SRAM - 4Mb
High Speed, Super Low Power and 4Mbit Full CMOS SRAM
|
Hynix Semiconductor
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX6335US20D3-T MAX6336US20D3-T MAX6337US20D3-T MA |
4-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits with Manual Reset
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
4-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits with Manual Reset
4-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits with Manual Reset
4-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits with Manual Reset 4引脚，超低电压，低功耗与手动复位レP复位电路
2.5-W Mono Class-D Audio Amplifier with Variable Gain (TPA2010) 9-DSBGA -40 to 85 4引脚，超低电压，低功耗与手动复位レP复位电路
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
