| PART |
Description |
Maker |
| DB-900-80W |
RF Power Amplifier Demoboard
|
ST Microelectronics
|
| AN572 |
TSH150 AND TSH151 DEMOBOARD
|
SGS Thomson Microelectronics
|
| AN630 |
STV5722/STV5726 DEMOBOARD
|
SGS Thomson Microelectronics
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TGA1073B-SCC |
27 32 GHz 0.7 Watt Power Amplifier
27- 32 GHz 0.7 Watt Power Amplifier 27000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
|
| 2SC479306 2SC4793-06 2SC4793FM 2SC4793M |
Power Amplifier Applications Driver Stage Amplifier Applications
Silicon NPN Epitaxial Type Power Amplifier Applications
|
Toshiba Semiconductor
|
| HMC907 |
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
1/2 Watt Power Amplifier Chip
|
Hittite Microwave Corporation
|
| BA5152F A5800531 |
Audio LSIs > Power amplifier
1.5V / 15mW dual power amplifier
From old datasheet system
|
ROHM[Rohm]
|
